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STARPOWER IGBT Module GD200HFX170C2S Silicon Half Bridge 1700 V 1.85 V -40 deg C +150 deg C_0
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STARPOWER IGBT Module GD200HFX170C2S Silicon Half Bridge 1700 V 1.85 V -40 deg C +150 deg C_0
STARPOWER IGBT Module GD200HFX170C2S Silicon Half Bridge 1700 V 1.85 V -40 deg C +150 deg C_1
STARPOWER IGBT Module GD200HFX170C2S Silicon Half Bridge 1700 V 1.85 V -40 deg C +150 deg C_2
GD200HFX170C2S.pdf
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STARPOWER IGBT Module GD200HFX170C2S Silicon Half Bridge 1700 V 1.85 V -40 deg C +150 deg C

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₹6,018
/Piece
₹6,018
Inclusive of all taxes
Inclusive of all taxes
₹5,100 + ₹918 GST

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Specifications

Product Code

GD200HFX170C2S

Type

Silicon

Configuration

Half Bridge

Emitter Voltage VCEO Maximum

1700 V

Emitter Saturation Voltage

1.85 V

Gate-Emitter Leakage Current

400 nA

Pd - Power Dissipation

1271 W

Minimum Operating Temperature

-40 deg C

Maximum Operating Temperature

+150 deg C

Brand

STARPOWER

Collector Current

200 A

UNSPSC No.

32111609

Warranty

12 months

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.

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Key Features

Low VCE(sat) Trench IGBT technology, VCE(sat) with positive temperature coefficient, Low inductance case, Fast & soft reverse recovery anti-parallel FWD, Isolated copper baseplate using DBC technology

Low VCE(sat) Trench IGBT technology, VCE(sat) with positive temperature coefficient, Low inductance case, Fast & soft reverse recovery anti-parallel FWD, Isolated copper baseplate using DBC technology

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Country of Origin

China

GD200HFX170C2S.pdf
Shipped by
L&T-SuFin
Estimated delivery by 26th - 28th Dec for Select pincode
Sold by
RIR POWER ELECTRONICS LTD

3.0

3.0/5

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